features trenchfet power mosfet 175 c maximum junction temperature 100% r g tested SUD30N04-10 product summary v (br)dss (v) r ds(on) ( ) i d (a) 40 0.010 @ v gs = 10 v 30 a 40 0.014 @ v gs = 4.5 v 30 a d g s to-252 s gd top view drain connected to tab order number: SUD30N04-10 n-channel mosfet absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 30 a continuous drain current (t j = 175 c) t c = 100 c i d 30 a a pulsed drain current i dm 120 a avalanche current i ar 50 repetitive a valanche energy b l = 0.1 mh e ar 125 mj power dissipation t c = 25 c p d 97 c w operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit jtitabit pcb mount d r 45 55 junction-to-ambient free air r thja 110 125 c/w junction-to-case r thjc 1.5 1.8 c/w notes: a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. surface mounted on 1? fr4 board. n-channel 40 v (d-s) 175 c mosfet www.freescale.net.cn 1 / 4
specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 40 v gate threshold voltage v gs(th) v ds = v gs , i ds = 250 a 1 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 40 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v, t j = 125 c 50 a g dss v ds = 40 v, v gs = 0 v, t j = 175 c 150 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 30 a v gs = 10 v, i d = 30 a 0.085 0.010 v gs = 10 v, i d = 30 a, t j = 125 c 0.014 0.017 drain source on state resistance a r ds( ) v gs = 10 v, i d = 30 a, t j = 175 c 0.0185 0.022 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 10 a 0.0115 0.014 v gs = 4.5 v, i d = 10 a, t j = 125 c 0.0195 0.024 v gs = 4.5 v, i d = 10 a, t j = 175 c 0.025 0.031 forward transconductance a g fs v ds = 15 v, i d = 30 a 20 57 s dynamic b input capacitance c iss 2700 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 600 pf reversen transfer capacitance c rss 160 total gate charge c q g 50 100 gate-source charge c q gs v ds = 15 v, v gs = 10 v, i d = 30 a 9 nc gate-drain charge c q gd ds , gs , d 11 gate resistance r g 1 3.6 turn-on delay time c t d(on) 14 30 rise time c t r v dd = 15 v, r l = 0.5 13 30 ns turn-off delay time c t d(off) v dd = 15 v , r l = 0 . 5 i d 30 a, v gen = 10 v, r g = 2.5 45 90 ns fall time c t f d gen g 25 50 source-drain ciode ratings and characteristics (t c = 25 c) b continuous current i s 30 a pulsed current i sm 120 a forward voltage a v sd i f = 30 a, v gs = 0 v 0.90 1.50 v reverse recovery time t rr i f = 30 a, di/dt = 100 a/ s 50 100 ns notes: a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. www.freescale.net.cn 2 / 4 SUD30N04-10 n-channel 40 v (d-s) 175 c mosfet
typical characteristics (25 c unless noted) 0 30 60 90 120 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) - on-resistance ( q g - total gate charge (nc) i d - drain current (a) v ds - drain-to-source voltage (v) c - capacitance (pf) r ds(on) ? ) v gs v gs - gate-to-source voltage (v) - transconductance (s) g fs 0 800 1600 2400 3200 4000 0 8 16 24 32 40 0 2 4 6 8 10 0 1020304050 0 20 40 60 80 100 0 306090120 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0 20406080100 0 30 60 90 120 0123456 25 c -55 c 3 v t c = 125 c v gs = 15 v i d = 30 a v gs = 10, 9, 8, 7, 6 v 5 v v gs = 10 v c iss c oss c rss t c = - 55 c 25 c 125 c 4 v v gs = 4.5 v www.freescale.net.cn 3 / 4 SUD30N04-10 n-channel 40 v (d-s) 175 c mosfet
typical characteristics (25 c unless noted) on-resistance vs. junction t emperature source-drain diode forward voltage (normalized) - on-resistance ( t j - junction temperature ( c) v sd - source-to-drain voltage (v) r ds(on) ? ) - source current (a) i s 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c thermal ratings t c = 25 c single pulse 0 10 20 30 40 0 25 50 75 100 125 150 175 safe operating area v ds - drain-to-source voltage (v) - drain current (a) i d 200 10 0.1 1 10 50 limited by r ds(on) 0.1 100 maximum drain current vs. ambiemt t emperature t a - ambient temperature ( c) - drain current (a) i d 1 ms 10 ms 100 ms dc 10 s 100 s normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 normalized effective transient thermal impedance 3 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1 www.freescale.net.cn 4 / 4 SUD30N04-10 n-channel 40 v (d-s) 175 c mosfet
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